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Fast. Flexible. Simple.
Amorphyx is redefining high-performance displays and integrated circuits with breakthrough amorphous metal technologies that enable THz switching speeds, ultra-low power consumption, and simplified manufacturing.
All Field Effect Transistors (FETs) create current in proportion to the energy in an electric field defined by gate-source potential and stored in the gate structure. This field induces a potential across a highly resistive material—most commonly, a semiconductor.
The energy transferred from the gate capacitance to the semiconductor reduces the material’s resistance, enabling current to increasingly flow as the potential across the resistive material increases.
Amorphous gate metals provide a uniquely smooth surface that reduces non-uniformities in the gate electric field and at the gate insulator-semiconductor interface. This minimizes charge scattering in the conduction channel, unlocking full transconductance benefits.
Amorphyx technologies are engineered for next-generation applications requiring high performance, low power, and scalable manufacturing on rigid and flexible substrates.
For consumer electronics with 240Hz+ refresh rates, variable refresh, improved image quality, and extended battery life. Simplified manufacturing reduces factory costs by up to 99%.
Large-scale integrated circuits on plastic substrates with RF, analog, data converters, and microprocessors—enabling mass adoption of IoT sensors and wireless data links.
Disposable wireless trackers and consumable sensors for healthcare monitoring, industrial tracking, and automotive systems—enabled by low-cost, high-performance flexible ICs.
Engineered for performance, manufacturability, and compatibility with existing thin film deposition systems.
Redefining amorphous metal oxide semiconductor performance and manufacturability. Optimized for high-refresh displays and flexible LSI.
Amorphous Metal Nonlinear Resistor based on Fowler-Nordheim quantum tunneling—achieving THz switching speeds with minimal structure.
Amorphous Metal Hot Electron Transistor—THz-speed transistors without semiconductors. The future of integrated circuits.
Core enabler of high-performance thin film devices. Ultra-smooth surfaces reduce charge scattering and enhance gate field uniformity.
Advanced TFT mobility solutions that improve electron transport in oxide semiconductors for faster, more efficient devices.
Full integration path for LCD, AMOLED, and microLED displays with simplified backplane architectures.
High-frequency analog circuits enabled by AMNR and AMHET for next-gen wireless communication.
Leverages existing thin film deposition equipment—reducing capital costs to 1% of traditional silicon fabs.
We leverage proprietary theoretical models and experimental databases to transfer thin film transistor technologies directly to your R&D and production lines—film by film.
Visit Official Website to CollaborateAmorphous metals lack a crystalline structure, resulting in atomic-level smoothness and uniformity. This reduces charge scattering in thin film transistors, enabling higher performance.
Through quantum tunneling (AMNR) and hot electron injection (AMHET), bypassing traditional semiconductor limitations and enabling ultra-fast switching.
Yes. Amorphyx leverages existing thin film deposition tools (PVD, CVD, ALD), minimizing capital investment and enabling rapid integration.
AMOLED, microLED, and high-refresh LCDs—especially in mobile, VR/AR, and automotive applications requiring high performance and low power.
Curious about cutting-edge technology? Reach out to learn more about our innovative thin film transistor technologies.
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