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Industry-first, easy-to-use e-mode GaN transistors that deliver up to 50% energy savings and 2x smaller electronics. Designed for EVs, industrial systems, and high-efficiency power conversion.
The world’s first integrated circuit enhancement-mode GaN platform. Smart, reliable, and designed for seamless integration with standard silicon gate drivers—no negative voltages required.
ICeGaN® power devices operate at higher switching frequencies with lower losses and lower on-resistance than silicon, delivering up to 50% greater energy efficiency.
Read moreHigher switching frequency enables smaller magnetics and capacitors, reducing system size and weight by up to 50%. Ideal for compact, high-density power designs.
Read moreIntegrated intelligent temperature control and gate protection. Operates like a MOSFET—no negative gate voltage required—ensuring robustness and ease of use.
Read moreDiscover our ICeGaN® family of GaN transistors and hybrid solutions—engineered for performance, reliability, and ease of integration across EVs, industrial, and consumer applications.
650V, 150A ICeGaN® HEMT
650V, 200A ICeGaN® HEMT
650V, 100A ICeGaN® HEMT
Hybrid GaN + IGBT Module
650V, 50A ICeGaN®
650V, 30A ICeGaN®
650V, 75A ICeGaN®
650V, 120A ICeGaN®
ICeGaN® enables smaller, lighter, and more efficient traction inverters. Combo ICeGaN hybrid technology offers a cost-effective alternative to SiC for EV powertrains.
Higher switching frequency reduces passive component size, enabling compact, high-efficiency industrial SMPS and motor drives.
Deliver up to 50% energy savings in server power supplies, reducing OPEX and cooling requirements.
Ideal for solar inverters and energy storage systems, enabling higher efficiency and power density.
Enable ultra-compact, high-efficiency chargers and adapters for laptops, phones, and EVs.
Support high-density power conversion in 5G base stations and network equipment.
Cambridge GaN Devices has been named a winner of Hyundai’s Open Innovation Challenge for sporty driving. Our ICeGaN® solution was selected for its robustness and ease of use in EV traction inverters.
Read more →Strengthening our fabless strategy, this partnership expands the supply chain for ICeGaN® power devices, ensuring scalable production.
Read more →Our ESG report highlights employee-led initiatives in Social Responsibility, Environmental Stewardship, and Governance & Ethics.
Download now →
Cambridge GaN Devices (CGD) is a fabless semiconductor company pioneering the next generation of power electronics with ICeGaN®—the world’s first integrated circuit enhancement-mode GaN platform.
Founded in Cambridge, UK, CGD is committed to enabling a sustainable future through energy-efficient, compact, and intelligent power solutions.
Learn More About UsInterested in our ICeGaN® technology or partnership opportunities? Visit our official website to learn more and contact the team.
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